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Crystal structure of boron-rich metal borides
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Crystal structure of boron-rich metal borides : ウィキペディア英語版
Crystal structure of boron-rich metal borides

Metals, and specifically rare-earth elements (RE), form numerous chemical complexes with boron. Their crystal structure and chemical bonding depend strongly on the metal element M and on its atomic ratio to boron. When B/M ratio exceeds 12, boron atoms form B12 icosahedra which are linked into a three-dimensional boron framework, and the metal atoms reside in the voids of this framework. Those icosahedra are basic structural units of most allotropes of boron and boron-rich rare-earth borides. In such borides, metal atoms donate electrons to the boron polyhedra, and thus these compounds are regarded as electron-deficient solids.
The crystal structures of many boron-rich borides can be attributed to certain types including MgAlB14, YB66, REB41Si1.2, B4C and other, more complex types such as RExB12C0.33Si3.0. Some of these formulas, for example B4C, YB66 and MgAlB14, historically reflect the idealistic structures, whereas the experimentally determined composition is nonstoichiometric and corresponds to fractional indexes. Boron-rich borides are usually characterized by large and complex unit cells, which can contain more than 1500 atomic sites and feature extended structures shaped as "tubes" and large modular polyhedra ("superpolyhedra"). Many of those sites have partial occupancy, meaning that the probability to find them occupied with a certain atom is smaller than one and thus that only some of them are filled with atoms. Scandium is distinguished among the rare-earth elements by that it forms numerous borides with uncommon structure types; this property of scandium is attributed to its relatively small atomic and ionic radii.
Crystals of the specific rare-earth boride YB66 are used as X-ray monochromators for selecting X-rays with certain energies (in the 1–2 keV range) out of synchrotron radiation. Other rare-earth borides may find application as thermoelectric materials, owing to their low thermal conductivity; the latter originates from their complex, "amorphous-like", crystal structure.
==Metal borides==

In metal borides, the bonding of boron varies depending on the atomic ratio B/M. Diborides have B/M = 2, as in the well-known superconductor MgB2; they crystallize in a hexagonal AlB2-type layered structure. Hexaborides have B/M = 6 and form a three-dimensional boron framework based on a boron octahedron (Fig. 1a). Tetraborides, i.e. B/M = 4, are mixtures of diboride and hexaboride structures. Cuboctahedron (Fig. 1b) is the structural unit of dodecaborides, which have a cubic lattice and B/M = 12. When the composition ratio exceeds 12, boron forms B12 icosahedra (Fig. 1c) which are linked into a three-dimensional boron framework, and the metal atoms reside in the voids of this framework.
This complex bonding behavior originates from the fact that boron has only three valence electrons; this hinders tetrahedral bonding as in diamond or hexagonal bonding as in graphite. Instead, boron atoms form polyhedra. For example, three boron atoms make up a triangle where they share two electrons to complete the so-called three-center bonding. Boron polyhedra, such as B6 octahedron, B12 cuboctahedron and B12 icosahedron, lack two valence electrons per polyhedron to complete the polyhedron-based framework structure. Metal atoms need to donate two electrons per boron polyhedron to form boron-rich metal borides. Thus, boron compounds are often regarded as electron-deficient solids.
Icosahedral B12 compounds include〔 α-rhombohedral boron (B13C2), β-rhombohedral boron (MeBx, 23≤x), α-tetragonal boron (B48B2C2), β-tetragonal boron (β-AlB12),〔 AlB10 or AlC4B24, YB25, YB50, YB66, NaB15 or MgAlB14, γ-AlB12,〔 BeB3 〔 and SiB6.〔
YB25 and YB50 decompose without melting that hinders their growth as single crystals by the floating zone method. However, addition of a small amount of Si solves this problem and results in single crystals 〔 with the stoichiometry of YB41Si1.2.〔 This stabilization technique allowed the synthesis of some other boron-rich rare-earth (RE) borides.
Albert and Hillebrecht reviewed binary and selected ternary boron compounds containing main-group elements, namely, borides of the alkali and alkaline-earth metals, aluminum borides and compounds of boron and the nonmetals C, Si, Ge, N, P, As, O, S and Se.〔 They, however, excluded the described here icosahedron-based rare-earth borides. Note that rare-earth elements have ''d''- and ''f''-electrons that complicates chemical and physical properties of their borides. Werheit ''et al.'' reviewed Raman spectra of numerous icosahedron-based boron compounds.〔
Figure 2 shows a relationship between the ionic radius of trivalent rare-earth ions and the composition of some rare-earth borides. Note that scandium has many unique boron compounds, as shown in figure 2, because of the much smaller ionic radius compared with other rare-earth elements.〔
In understanding the crystal structures of rare-earth borides, it is important to keep in mind the concept of partial site occupancy, that is, some atoms in the described below unit cells can take several possible positions with a given statistical probability. Thus, with the given statistical probability, some of the partial-occupancy sites in such a unit cell are empty, and the remained sites are occupied.

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